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125 mA, 500 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39

Part No.:
VP0550N2
Manufacturer:
Supertex
Product Range:
Transistors (BJT)
VP0550N2

Product Information

Terminal FinishTIN LEAD
Terminal FormWIRE
Power Dissipation Ambient-Max3.5 W
Operating Temperature-Max150 Cel
Qualification StatusCOMMERCIAL
JESD-609 Codee0
Package ShapeROUND
StatusDiscontinued
Package Body MaterialMETAL
Transistor Element MaterialSILICON
Drain Current-Max (ID)0.1250 A
Drain Current-Max (Abs) (ID)0.1250 A
Sub CategoryOther Transistors
Peak Reflow Temperature (Cel)NOT SPECIFIED
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max125 ohm
Moisture Sensitivity LevelNOT SPECIFIED
DS Breakdown Voltage-Min500 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Transistor ApplicationSWITCHING
Surface MountNO
JEDEC-95 CodeTO-39
Case ConnectionDRAIN
Operating ModeENHANCEMENT MODE
Polarity/Channel TypeP-CHANNEL
Number of Terminals3
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Power Dissipation-Max (Abs)3.5 W
JESD-30 CodeO-MBCY-W3
Terminal PositionBOTTOM
Feedback Cap-Max (Crss)10 pF
Number of Elements1
Package StyleCYLINDRICAL


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