1500 mA, 50 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

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Product Information

Terminal Finish	TIN LEAD
Terminal Form	THROUGH-HOLE
Power Dissipation Ambient-Max	3 W
Operating Temperature-Max	150 Cel
Qualification Status	COMMERCIAL
JESD-609 Code	e0
Package Shape	RECTANGULAR
Additional Feature	HIGH INPUT IMPEDANCE
Status	Discontinued
Package Style	IN-LINE
Transistor Element Material	SILICON
Drain Current-Max (ID)	1.5 A
Feedback Cap-Max (Crss)	30 pF
Sub Category	FET General Purpose Power
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.3000 ohm
Moisture Sensitivity Level	NOT SPECIFIED
DS Breakdown Voltage-Min	50 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	NO
Mfr Package Description	PLASTIC, DIP-14
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL
Number of Terminals	14
REACH Compliant	Yes
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max (Abs)	3 W
JESD-30 Code	R-PDIP-T14
Terminal Position	DUAL
Number of Elements	4
Package Body Material	PLASTIC/EPOXY

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