100 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39

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Product Information

Terminal Finish	TIN LEAD
Terminal Form	WIRE
Power Dissipation Ambient-Max	6 W
Operating Temperature-Max	150 Cel
Qualification Status	COMMERCIAL
JESD-609 Code	e0
Package Shape	ROUND
Additional Feature	HIGH INPUT IMPEDANCE
Status	Discontinued
Package Body Material	METAL
Transistor Element Material	SILICON
Drain Current-Max (ID)	0.1000 A
Drain Current-Max (Abs) (ID)	0.1000 A
Sub Category	FET General Purpose Power
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	60 ohm
Moisture Sensitivity Level	NOT SPECIFIED
DS Breakdown Voltage-Min	500 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	NO
JEDEC-95 Code	TO-39
Case Connection	DRAIN
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL
Number of Terminals	3
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max (Abs)	6 W
JESD-30 Code	O-MBCY-W3
Terminal Position	BOTTOM
Feedback Cap-Max (Crss)	5 pF
Number of Elements	1
Package Style	CYLINDRICAL

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