200 V, 20 ohm, N AND P-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Finish	MATTE TIN
Terminal Form	GULL WING
Package Shape	SQUARE
Status	ACTIVE
Lead Free	Yes
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
EU RoHS Compliant	Yes
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	20 ohm
Transistor Type	GENERAL PURPOSE POWER
Channel Type	N-CHANNEL AND P-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	200 V
Transistor Application	SWITCHING
Surface Mount	Yes
Mfr Package Description	7 X 7 MM, 1.60 MM HEIGHT, GREEN, MS-026BBA, QFP-32
Operating Mode	ENHANCEMENT
Number of Terminals	32
Terminal Position	QUAD
Number of Elements	1
Package Style	FLATPACK

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