1 A, 500 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

The actual product may differ from image shown

Product Information

Terminal Finish	MATTE TIN
Terminal Form	GULL WING
Avalanche Energy Rating (Eas)	40 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Lead Free	Yes
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	1 A
EU RoHS Compliant	Yes
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	6 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	4 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	500 V
Transistor Application	SWITCHING
Surface Mount	Yes
Mfr Package Description	DPAK-3
Operating Mode	ENHANCEMENT
Number of Terminals	2
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

Offer your acceptable price, and we may make you satisfied.Your Target Price