250 A, 200 V, 8.6 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Finish	TIN/SILVER
Terminal Form	UNSPECIFIED
Package Shape	RECTANGULAR
Status	ACTIVE
Lead Free	Yes
Package Body Material	UNSPECIFIED
Transistor Element Material	SILICON
Drain Current-Max (ID)	250 A
EU RoHS Compliant	Yes
Configuration	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max	8.6 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	750 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	200 V
Transistor Application	SWITCHING
Case Connection	ISOLATED
Mfr Package Description	CASE D56, SEMITRANS-7
Operating Mode	ENHANCEMENT
Number of Terminals	7
Terminal Position	UPPER
Number of Elements	2
Package Style	FLANGE MOUNT

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