0.5 A, 20 V, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Finish	TIN BISMUTH
Terminal Form	FLAT
Power Dissipation Ambient-Max	10 W
Package Shape	RECTANGULAR
Status	ACTIVE
Lead Free	Yes
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	0.5000 A
EU RoHS Compliant	Yes
Configuration	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	20 V
Transistor Application	AMPLIFIER
Surface Mount	Yes
Case Connection	SOURCE
Mfr Package Description	LEAD FREE, POWER, MINIMOLD PACKAGE-3
Operating Mode	ENHANCEMENT
Number of Terminals	3
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

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