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0.5 A, 150 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

Part No.:
HAT2035R-EL-E
Manufacturer:
Renesas Electronics
Product Range:
Transistors (BJT)
HAT2035R-EL-E

Product Information

Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Package ShapeRECTANGULAR
StatusDISCONTINUED
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)0.5000 A
EU RoHS CompliantYes
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max5.5 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)2 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min150 V
Transistor ApplicationSWITCHING
Surface MountYes
Mfr Package Description3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Operating ModeENHANCEMENT
Number of Terminals8
Terminal PositionDUAL
Number of Elements2
Package StyleSMALL OUTLINE


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