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0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126

Part No.:
2SC3416E
Manufacturer:
ON Semiconductor
Product Range:
Transistors (BJT)
2SC3416E

Product Information

StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Transistor PolarityNPN
Terminal FormTHROUGH-HOLE
Power Dissipation Ambient-Max1.2 W
Number of Terminals3
DC Current Gain-Min (hFE)100
Collector-emitter Voltage-Max200 V
Transistor ApplicationAMPLIFIER
Transition Frequency-Nom (fT)70 MHz
Collector Current-Max (IC)0.1000 A
Transistor Element MaterialSILICON
Terminal PositionSINGLE
Transistor TypeGENERAL PURPOSE POWER
Package ShapeRECTANGULAR
ConfigurationSINGLE
Package StyleFLANGE MOUNT
Number of Elements1


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