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1.5 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220

Part No.:
BUK446-1000B127
Manufacturer:
NXP Semiconductors
Product Range:
Transistors (BJT)
BUK446-1000B127

Product Information

StatusACTIVE
Channel TypeN-CHANNEL
Package Body MaterialPLASTIC/EPOXY
Mfr Package DescriptionTO-220, 3 PIN
Pulsed Drain Current-Max (IDM)6 A
Terminal FormTHROUGH-HOLE
Operating ModeENHANCEMENT
Package StyleFLANGE MOUNT
Transistor ApplicationSWITCHING
Drain Current-Max (ID)1.5 A
Case ConnectionISOLATED
Transistor Element MaterialSILICON
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Terminal PositionSINGLE
Transistor TypeGENERAL PURPOSE POWER
Package ShapeRECTANGULAR
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max5 ohm
Number of Terminals3
DS Breakdown Voltage-Min1000 V
Number of Elements1


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