0.325 A, 300 V, 17 ohm, P-CHANNEL, Si, POWER, MOSFET

The actual product may differ from image shown

Product Information

Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Channel Type	P-CHANNEL
Pulsed Drain Current-Max (IDM)	1.3 A
Terminal Form	GULL WING
Operating Mode	ENHANCEMENT
Package Style	SMALL OUTLINE
Drain Current-Max (ID)	0.3250 A
Transistor Application	SWITCHING
Number of Elements	1
Case Connection	DRAIN
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	DUAL
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	17 ohm
Number of Terminals	4
DS Breakdown Voltage-Min	300 V
Surface Mount	Yes

Offer your acceptable price, and we may make you satisfied.Your Target Price