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2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

Part No.:
RD35HUF2
Manufacturer:
Mitsubishi Electric
Product Range:
Transistors (BJT)
RD35HUF2

Product Information

StatusACTIVE
Channel TypeN-CHANNEL
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Mfr Package DescriptionROHS COMPLIANT PACKAGE-8
Terminal FormFLAT
Operating ModeENHANCEMENT
Package StyleFLANGE MOUNT
Drain Current-Max (ID)10 A
Transistor ApplicationAMPLIFIER
Highest Frequency BandULTRA HIGH FREQUENCY BAND
Number of Elements2
Case ConnectionSOURCE
Transistor Element MaterialSILICON
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Terminal PositionDUAL
Transistor TypeRF POWER
Package ShapeRECTANGULAR
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Number of Terminals8
DS Breakdown Voltage-Min40 V
Surface MountYes


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