2 A, 700 V, 9.75 ohm, N-CHANNEL, Si, POWER, MOSFET

The actual product may differ from image shown

Product Information

Terminal Form	GULL WING
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	2 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	9.75 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	6 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	700 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	TO-220S, 3 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	2
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

Offer your acceptable price, and we may make you satisfied.Your Target Price