2 A, 700 V, 9.75 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	6 A
Terminal Form	GULL WING
Operating Mode	ENHANCEMENT
Package Style	SMALL OUTLINE
Drain Current-Max (ID)	2 A
Transistor Application	SWITCHING
Number of Elements	1
Case Connection	DRAIN
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	9.75 ohm
Number of Terminals	2
DS Breakdown Voltage-Min	700 V
Surface Mount	Yes

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