1 A, 800 V, 12.3 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	3 A
Terminal Form	THROUGH-HOLE
Operating Mode	ENHANCEMENT
Number of Terminals	3
Transistor Application	SWITCHING
Drain Current-Max (ID)	1 A
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	12.3 ohm
Package Style	FLANGE MOUNT
DS Breakdown Voltage-Min	800 V
Number of Elements	1

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