12 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	36 A
Terminal Form	THROUGH-HOLE
Operating Mode	ENHANCEMENT
Number of Terminals	3
Transistor Application	SWITCHING
Drain Current-Max (ID)	12 A
Case Connection	ISOLATED
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.4000 ohm
Package Style	FLANGE MOUNT
DS Breakdown Voltage-Min	200 V
Number of Elements	1

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