11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

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Product Information

Terminal Finish	MATTE TIN
Terminal Form	GULL WING
Avalanche Energy Rating (Eas)	340 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Lead Free	Yes
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	11 A
EU RoHS Compliant	Yes
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.3800 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	22 A
Channel Type	N-CHANNEL
China RoHS Compliant	Yes
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	600 V
Surface Mount	Yes
Mfr Package Description	GREEN, PLASTIC, TO-263, 3 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	2
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

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