Your cart is empty

100 A, 120 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part No.:
IPP048N12N3G
Manufacturer:
Infineon Technologies
Product Range:
Transistors (BJT)
IPP048N12N3G

Product Information

StatusACTIVE
Channel TypeN-CHANNEL
Package Body MaterialPLASTIC/EPOXY
Mfr Package DescriptionGREEN, PLASTIC, TO-220, 3 PIN
Pulsed Drain Current-Max (IDM)400 A
Terminal FormTHROUGH-HOLE
Operating ModeENHANCEMENT
Package StyleFLANGE MOUNT
Avalanche Energy Rating (Eas)740 mJ
Transistor ApplicationSWITCHING
Drain Current-Max (ID)100 A
Transistor Element MaterialSILICON
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Terminal PositionSINGLE
Transistor TypeGENERAL PURPOSE POWER
Package ShapeRECTANGULAR
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.0048 ohm
Number of Terminals3
DS Breakdown Voltage-Min120 V
Number of Elements1


Call for Availability
Price for:  EachMinimum:  1

Target Price

Offer your acceptable price, and we may make you satisfied.Your Target Price

Technical Support

Technical Support

Customer Reviews

Write Review

Customer Q&A Exchange

Ask A Question