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100 A, 60 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Part No.:
IPD031N06L3G
Manufacturer:
Infineon Technologies
Product Range:
Transistors (BJT)
IPD031N06L3G

Product Information

Terminal FinishMATTE TIN
Terminal FormGULL WING
Avalanche Energy Rating (Eas)149 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)100 A
EU RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.0031 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)400 A
Channel TypeN-CHANNEL
China RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min60 V
Transistor ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionGREEN, PLASTIC, TO-252, 3 PIN
Operating ModeENHANCEMENT
Number of Terminals2
Terminal PositionSINGLE
Number of Elements1
Package StyleSMALL OUTLINE


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