Your cart is empty

160 A, 100 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA

Part No.:
IPB039N10N3G
Manufacturer:
Infineon Technologies
Product Range:
Transistors (BJT)
IPB039N10N3G

Product Information

Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Avalanche Energy Rating (Eas)340 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)160 A
EU RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.0039 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)640 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min100 V
Transistor ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionGREEN, PLASTIC, TO-263, 7 PIN
Operating ModeENHANCEMENT
Number of Terminals6
Terminal PositionSINGLE
Number of Elements1
Package StyleSMALL OUTLINE


Call for Availability
Price for:  EachMinimum:  1

Target Price

Offer your acceptable price, and we may make you satisfied.Your Target Price

Technical Support

Technical Support

Customer Reviews

Write Review

Customer Q&A Exchange

Ask A Question