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120 A, 120 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Part No.:
IPB038N12N3G
Manufacturer:
Infineon Technologies
Product Range:
Transistors (BJT)
IPB038N12N3G

Product Information

Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Avalanche Energy Rating (Eas)900 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)120 A
EU RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.0038 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)480 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min120 V
Transistor ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionGREEN, PLASTIC, TO-263, D2PAK-3
Operating ModeENHANCEMENT
Number of Terminals2
Terminal PositionSINGLE
Number of Elements1
Package StyleSMALL OUTLINE


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