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180 A, 120 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263

Part No.:
IPB036N12N3G
Manufacturer:
Infineon Technologies
Product Range:
Transistors (BJT)
IPB036N12N3G

Product Information

Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Avalanche Energy Rating (Eas)900 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)180 A
EU RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.0036 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)720 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min120 V
Transistor ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionGREEN, PLASTIC, TO-263, 7 PIN
Operating ModeENHANCEMENT
Number of Terminals6
Terminal PositionSINGLE
Number of Elements1
Package StyleSMALL OUTLINE


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