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12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
BTS112AE3045A
Manufacturer:
Infineon Technologies
Product Range:
Transistors (BJT)
BTS112AE3045A

Product Information

Terminal FinishMATTE TIN
Terminal FormGULL WING
Package ShapeRECTANGULAR
StatusEOL/LIFEBUY
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)12 A
ConfigurationSINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Drain-source On Resistance-Max0.1500 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)48 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min60 V
Transistor ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionTO-220ABSMD VERSION, 3 PIN
Operating ModeENHANCEMENT
Number of Terminals2
Terminal PositionSINGLE
Number of Elements1
Package StyleSMALL OUTLINE


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