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18 A, 30 V, 0.0072 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
BSF045N03LQ3G
Manufacturer:
Infineon Technologies
Product Range:
Transistors (BJT)
BSF045N03LQ3G

Product Information

Terminal FinishNOT SPECIFIED
Terminal FormNO LEAD
Avalanche Energy Rating (Eas)30 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Package Body MaterialMETAL
Transistor Element MaterialSILICON
Drain Current-Max (ID)18 A
EU RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.0072 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)252 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min30 V
Transistor ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionGREEN, METAL, WDSON-2
Operating ModeENHANCEMENT
Number of Terminals2
Terminal PositionBOTTOM
Number of Elements1
Package StyleCHIP CARRIER


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