12 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Finish	MATTE TIN
Terminal Form	FLAT
Avalanche Energy Rating (Eas)	22 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Lead Free	Yes
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	12 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.0100 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	200 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	60 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	GREEN, PLASTIC, TDSON-8
Operating Mode	ENHANCEMENT
Number of Terminals	5
Terminal Position	DUAL
Number of Elements	1
Package Style	SMALL OUTLINE

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