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14.9 A, 30 V, 0.0084 ohm, P-CHANNEL, Si, POWER, MOSFET

Part No.:
BSC084P03NS3EG
Manufacturer:
Infineon Technologies
Product Range:
Transistors (BJT)
BSC084P03NS3EG

Product Information

Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Power Dissipation Ambient-Max2.5 W
Avalanche Energy Rating (Eas)105 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)14.9 A
EU RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.0084 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)200 A
Channel TypeP-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min30 V
Transistor ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionGREEN, PLASTIC, TDSON-8
Operating ModeENHANCEMENT
Number of Terminals5
Terminal PositionDUAL
Number of Elements1
Package StyleSMALL OUTLINE


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