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1 A, 90 V, N-CHANNEL, Si, POWER, MOSFET

Part No.:
HTANFET
Manufacturer:
Honeywell
Product Range:
Transistors (BJT)
HTANFET

Product Information

StatusACTIVE
Channel TypeN-CHANNEL
Package Body MaterialMETAL
Mfr Package DescriptionPOWERTAB-4
Pulsed Drain Current-Max (IDM)1 A
Terminal FormTHROUGH-HOLE
Operating ModeENHANCEMENT
Package StyleFLANGE MOUNT
Transistor ApplicationSWITCHING
Drain Current-Max (ID)1 A
Case ConnectionISOLATED
Transistor Element MaterialSILICON
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Terminal PositionSINGLE
Transistor TypeGENERAL PURPOSE POWER
Package ShapeRECTANGULAR
ConfigurationSINGLE
Number of Terminals4
DS Breakdown Voltage-Min90 V
Number of Elements1


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