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21 A, 600 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AA

Part No.:
FMW21N60GSC-K1
Manufacturer:
Fuji Electric
Product Range:
Transistors (BJT)
FMW21N60GSC-K1

Product Information

Terminal FormTHROUGH-HOLE
Power Dissipation Ambient-Max2.5 W
Avalanche Energy Rating (Eas)334 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)21 A
ConfigurationSINGLE
Drain-source On Resistance-Max0.3700 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)84 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min600 V
Transistor ApplicationSWITCHING
Mfr Package DescriptionTO-247, 3 PIN
Operating ModeENHANCEMENT
Number of Terminals3
Terminal PositionSINGLE
Number of Elements1
Package StyleFLANGE MOUNT


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