25 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Mfr Package Description	TO-3PF, 3 PIN
Pulsed Drain Current-Max (IDM)	100 A
Terminal Form	THROUGH-HOLE
Operating Mode	ENHANCEMENT
Package Style	FLANGE MOUNT
Transistor Element Material	SILICON
Drain Current-Max (ID)	25 A
Case Connection	ISOLATED
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Channel Type	N-CHANNEL
Drain-source On Resistance-Max	0.1000 ohm
Number of Terminals	3
DS Breakdown Voltage-Min	250 V

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