C BAND, GaN, N-CHANNEL, RF POWER, HEMFET

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Product Information

Status	ACTIVE
Channel Type	N-CHANNEL
Terminal Finish	NICKEL GOLD
Package Body Material	CERAMIC, METAL-SEALED COFIRED
Mfr Package Description	ROHS COMPLIANT PACKAGE-2
Terminal Form	FLAT
Operating Mode	ENHANCEMENT
Package Style	FLATPACK
Transistor Application	AMPLIFIER
Highest Frequency Band	C BAND
Number of Elements	1
Case Connection	SOURCE
Transistor Element Material	GALLIUM NITRIDE
FET Technology	HIGH ELECTRON MOBILITY
Terminal Position	DUAL
Transistor Type	RF POWER
Package Shape	RECTANGULAR
Configuration	SINGLE
Number of Terminals	2
DS Breakdown Voltage-Min	120 V
Surface Mount	Yes

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