11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

The actual product may differ from image shown

Product Information

Status	ACTIVE
Channel Type	N-CHANNEL
Package Body Material	PLASTIC/EPOXY
Mfr Package Description	ROHS COMPLIANT PACKAGE-3
Pulsed Drain Current-Max (IDM)	30 A
Terminal Form	THROUGH-HOLE
Operating Mode	ENHANCEMENT
Package Style	IN-LINE
Transistor Application	SWITCHING
Drain Current-Max (ID)	11 A
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.1200 ohm
Number of Terminals	3
DS Breakdown Voltage-Min	100 V
Number of Elements	1

Offer your acceptable price, and we may make you satisfied.Your Target Price