Your cart is empty

2.7 A, 25 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
AP2304GN-HF
Manufacturer:
APEC
Product Range:
Transistors (BJT)
AP2304GN-HF

Product Information

Terminal FormGULL WING
Power Dissipation Ambient-Max1.38 W
Package ShapeRECTANGULAR
StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)2.7 A
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.1170 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)10 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min25 V
Transistor ApplicationSWITCHING
Surface MountYes
Mfr Package DescriptionHALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Operating ModeENHANCEMENT
Number of Terminals3
Terminal PositionDUAL
Number of Elements1
Package StyleSMALL OUTLINE


Call for Availability
Price for:  EachMinimum:  1

Target Price

Offer your acceptable price, and we may make you satisfied.Your Target Price

Technical Support

Technical Support

Customer Reviews

Write Review

Customer Q&A Exchange

Ask A Question