12 A, 100 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB

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Product Information

Terminal Form	GULL WING
Avalanche Energy Rating (Eas)	40 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	12 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.1600 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	48 A
Channel Type	P-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	100 V
Transistor Application	SWITCHING
Surface Mount	Yes
Mfr Package Description	ROHS COMPLIANT, TO-263, 3 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	2
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

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