200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET

The actual product may differ from image shown

Product Information

Terminal Form	GULL WING
Power Dissipation Ambient-Max	2.7 W
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	1.2 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	4 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	200 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4
Operating Mode	ENHANCEMENT
Number of Terminals	4
Terminal Position	DUAL
Number of Elements	1
Package Style	SMALL OUTLINE

Offer your acceptable price, and we may make you satisfied.Your Target Price