1 A, 600 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

The actual product may differ from image shown

Product Information

Terminal Form	GULL WING
Avalanche Energy Rating (Eas)	0.5000 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	1 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	12 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	3 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	600 V
Transistor Application	SWITCHING
Surface Mount	Yes
Mfr Package Description	ROHS COMPLIANT PACKAGE-3
Operating Mode	ENHANCEMENT
Number of Terminals	2
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

Offer your acceptable price, and we may make you satisfied.Your Target Price