MOSFET 650V 30A E-Mode GaN Preproduction Units

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Product Information

Mounting Style	SMD/SMT
Vds - Drain-Source Breakdown Voltage	650 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	55 mOhms
Channel Mode	Enhancement
Brand	GaN Systems
Id - Continuous Drain Current	30 A
Vgs th - Gate-Source Threshold Voltage	1.6 V
Packaging	Tray
Product Category	MOSFET
Qg - Gate Charge	6.5 nC
Vgs - Gate-Source Breakdown Voltage	+/- 10 V
Ciss - Input Capacitance	200 pF
RoHS	Details
Manufacturer	GaN Systems

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