MOSFET 650V 22A E-Mode GaN Preproduction Units

The actual product may differ from image shown

Product Information

Mounting Style	SMD/SMT
Vds - Drain-Source Breakdown Voltage	650 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	73 mOhms
Channel Mode	Enhancement
Brand	GaN Systems
Id - Continuous Drain Current	22 A
Vgs th - Gate-Source Threshold Voltage	1.6 V
Packaging	Tray
Product Category	MOSFET
Qg - Gate Charge	4.9 nC
Vgs - Gate-Source Breakdown Voltage	+/- 10 V
RoHS	Details
Manufacturer	GaN Systems

Offer your acceptable price, and we may make you satisfied.Your Target Price