X BAND, GaAs, N-CHANNEL, RF POWER, HEMFET

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Product Information

Terminal Finish	NOT SPECIFIED
Terminal Form	NO LEAD
Package Shape	RECTANGULAR
Status	DISCONTINUED
Lead Free	Yes
Package Body Material	UNSPECIFIED
Transistor Element Material	GALLIUM ARSENIDE
EU RoHS Compliant	Yes
Configuration	SINGLE
Transistor Type	RF POWER
Channel Type	N-CHANNEL
FET Technology	HIGH ELECTRON MOBILITY
DS Breakdown Voltage-Min	10 V
Transistor Application	AMPLIFIER
Surface Mount	Yes
Mfr Package Description	ROHS COMPLIANT PACKAGE-3
Operating Mode	DEPLETION
Number of Terminals	3
Highest Frequency Band	X BAND
Terminal Position	UPPER
Number of Elements	1
Package Style	UNCASED CHIP

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