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24 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
AP0503GMT-HF
Manufacturer:
APEC
Product Range:
Transistors (BJT)
AP0503GMT-HF

Product Information

Terminal FormFLAT
Power Dissipation Ambient-Max5 W
Avalanche Energy Rating (Eas)28.8 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)24 A
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.0055 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)250 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min30 V
Transistor ApplicationSWITCHING
Surface MountYes
Mfr Package Description6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
Operating ModeENHANCEMENT
Number of Terminals8
Terminal PositionDUAL
Number of Elements1
Package StyleSMALL OUTLINE


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