TRANS SJT 1.2KV 10A

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Produktinfodermation

Categodery	Discrete Semiconductoder Products
FET Feature	Super Junction
Online Catalog	Silicon Carbide (SiC) Super Junction FETs
Product Photos	TO263-3
Family	FETs - Single
Vgs(th) (Max) @ Id	-
Input Capacitance (Ciss) @ Vds	1403pF @ 800V
Series	-
Standard Package	50
Supplier Device Package	-
Datasheets	GA10JT12-263
Rds On (Max) @ Id, Vgs	120 mOhm @ 10A
FET Type	Silicon Carbide, Nodermally Off
Packaging	Tube
Power - Max	170W
Package / Case	-
Mounting Type	Surface Mount
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25 C	25A (Tc)
Other Names	1242-1186 GA10JT12-220ISO GA10JT12220ISO
Gate Charge (Qg) @ Vgs	-

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